 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| R N N-CHANNEL MOSFET JCS740 MAIN CHARACTERISTICS Package ID VDSS Rdson @Vgs=10V Qg UPS 10 A 400 V 0.54 60 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 35pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Crss ( 35pF) dv/dt RoHS ORDER MESSAGE Order codes JCS740S-O-S-N-B JCS740B-O-B-N-B JCS740C-O-C-N-B JCS740F-O-F-N-B Halogen Free NO NO NO NO Device Weight 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) Marking JCS740S JCS740B JCS740C JCS740F Package TO-263 TO-262 TO-220C TO-220MF Packaging Tube Tube Tube Tube 201008B 1/12 R JCS740 ABSOLUTE RATINGS (Tc=25) JCS740F Value JCS740S/B/C 400 T=25 T=100 10 6.3 40 30 10* 6.3* 40* Unit V A A A V Parameter Drain-Source Voltage Drain Current -continuous Symbol VDSS ID 1 Drain Current - pulse note 1 Gate-Source Voltage 2 Single Pulsed Avalanche Energynote 2 1 Avalanche Currentnote 1 IDM VGSS EAS 450 mJ IAR 10 13.4 5.5 134 1.08 44 0.35 A mJ V/ns W W/ 1 EAR Repetitive Avalanche Currentnote 1 3 dv/dt Peak Diode Recovery dv/dtnote 3 Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature Soldering Purposes for PD TC=25 -Derate above 25 TJTSTG -55+150 TL 300 * *Drain current limited by maximum junction temperature 201008B 2/12 R JCS740 Tests conditions Min Typ Max Units Parameter Symbol ELECTRICAL CHARACTERISTICS Off -Characteristics Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance VGS(th) VDS = VGS , ID=250A 2.0 4.0 V BVDSS ID=250A, VGS=0V 400 V BVDSS/ ID=250A, referenced to 25 TJ VDS=400V,VGS=0V, TC=25 VDS=320V, IGSSF VDS=0V, TC=125 - 0.4 - V/ IDSS - - 10 100 100 A A nA VGS =30V IGSSR VDS=0V, VGS =-30V - - -100 nA RDS(ON) VGS =10V , ID=5.0A VDS = 40V, ID=5.0Anote 4 VDS=25V, VGS =0V, f=1.0MHZ - 0.43 0.54 gfs - 9.6 - S Dynamic Characteristics Ciss Coss Crss 1400 1800 pF 150 195 35 45 pF pF 201008B 3/12 R JCS740 td(on) tr td(off) tf Qg Qgs Qgd VDS =320V , ID=10A VGS =10V note 45 VDD=200V,ID=10A,RG=25 note 45 20 50 ns ns ns ns nC nC nC ELECTRICAL CHARACTERISTICS Switching Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time Turn-Off Fall time Total Gate Charge Gate-Source charge Gate-Drain charge 80 170 125 260 85 180 60 7.4 27 71 - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain -Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse recovery time Reverse recovery charge VSD IS 10 A ISM - - 40 A VGS=0V, IS=10A - 1.5 - V trr Qrr VGS=0V, IS=10A dIF/dt=100A/s (note 4) - 330 3.57 - ns C THERMAL CHARACTERISTIC JCS740S/B/C 0.93 62.5 Max JCS740F 2.86 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1 2L=7.9mH, IAS=10A, VDD=50V, RG=25 , TJ=25 3ISD 10A,di/dt 300A/s,VDDBVDSS, TJ=25 4300s,2 5 Symbol Rth(j-c) Rth(j-A) Unit /W /W Notes: 1 Pulse width limited by maximum junction temperature 2 L=7.9mH, IAS=10A, VDD=50V, RG=25 ,Starting TJ=25 3 ISD 10A,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature 201008B 4/12 R JCS740 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics 10 On-Region Characteristics VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Top I D [A] 10 I D [A] 25 150 1 Notes 1. 250s pulse test 2. TC=25 1 0.1 Notes 1.250s pulse test 2.VDS=40V 2 4 6 8 10 1 10 V DS [V] V GS [V] On-Resistance Variation vs. Drain Current and Gate Voltage 1.05 Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 R DS ( on ) [ ] 1.00 VGS=10V 0.95 25 I DR [A] 0.90 VGS=20V 1 0.85 150 T Note j=25 0.1 0.4 0.6 0.8 1.0 1.2 0.80 Notes 1. 250s pulse test 2. VGS=0V 8 1.4 1.6 0.75 0 1 2 3 4 5 6 7 I D [A] V SD [V] Capacitance Characteristics Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 12 Gate Charge Characteristics 3x10 3 10 VDS=320V VDS=200V VGS Gate Source Voltage[V] Capacitance [pF] 8 2x10 3 VDS=80V 6 1x10 3 4 2 0 10 -1 V DS Drain-Source Voltage [V] 10 0 10 1 0 0 4 8 12 16 20 24 28 32 Qg Toltal Gate Charge [nC] 201008B 5/12 R JCS740 On-Resistance Variation vs. Temperature 3.0 ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation vs. Temperature 1.2 2.5 BVDS(Normalized) 1.1 RD(on) (Normalized) 2.0 1.0 1.5 1.0 0.9 Notes 1. VGS=0V 2. ID=250A -50 -25 0 25 50 75 100 125 150 0.5 Notes 1. VGS=10V 2. ID=5.0A -50 -25 0 25 50 75 100 125 150 0.8 -75 0.0 -75 Tj [ ] Tj [ ] Maximum Safe Operating Area For JCS740S/B/C 10 2 Maximum Safe Operating Area For JCS740F 10 2 Operation in This Area is Limited by RDS(ON) I D Drain Current [A] 10s 100s Operation in This Area is Limited by RDS(ON) 10s 100s I D Drain Current [A] 10 1 10 1 1ms 10ms 10 0 1ms 10ms 10 0 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 VD S Drain-Source Voltage [V] 10 1 10 2 10 -1 Note: 1 TC=25 2 TJ=150 3 Single Pulse 0 100ms DC 10 VD S Drain-Source Voltage [V] 10 1 10 2 Maximum Drain Current vs. Case Temperature 12 I D Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 T C Case Temperature [] 201008B 6/12 R JCS740 Transient Thermal Response Curve For JCS740S/B/C (t) Thermal Response 1 D = 0 .5 0 .2 ELECTRICAL CHARACTERISTICS (curves) 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 N 1 2 3 o te s : Z J C (t)= 0 .9 3 /W M a x D u ty F a c to r, D = t1 /t2 T J M -T c = P D M * Z J C(t) JC Z P DM 0 .0 1 s in g le p u ls e 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 E -5 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] Transient Thermal Response Curve For JCS740F (t) Thermal Response D = 0 .5 1 0 .2 0 .1 0 .0 5 N 1 2 3 o te s : Z J C (t)= 2 .8 6 /W M a x D u ty F a c to r, D = t1 /t2 T J M -T c = P D M * Z J C(t) 0 .1 0 .0 2 0 .0 1 JC Z P DM s in g le p u ls e 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 t1 t2 1 10 t1 S q u a r e W a v e P u ls e D u r a tio n [s e c ] 201008B 7/12 R JCS740 Unitmm PACKAGE MECHANICAL DATA TO-262 201008B 8/12 R JCS740 Unitmm PACKAGE MECHANICAL DATA TO-263 201008B 9/12 R JCS740 Unitmm PACKAGE MECHANICAL DATA TO-220C 201008B 10/12 R JCS740 Unitmm PACKAGE MECHANICAL DATA TO-220MF 201008B 11/12 R JCS740 NOTE Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 1. 1. 2. 3. 4. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel 86-432-64678411 Fax86-432-64665812 Web Sitewww.hwdz.com.cn MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411-3098/3099 Fax: 86-432-64671533 201008B 12/12 |
Price & Availability of JCS740F-O-F-N-B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |